
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices.
- Redaktør
- Jennifer Rupp, Daniele Ielmini, Ilia Valov
- Opplag
- 2022 ed.
- ISBN
- 9783030424268
- Språk
- Engelsk
- Vekt
- 310 gram
- Utgivelsesdato
- 16.10.2022
- Antall sider
- 383
