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Research on the Radiation Effects and Compact Model of SiGe HBT
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Research on the Radiation Effects and Compact Model of SiGe HBT

Forfatter:
Engelsk
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
Forfatter
Yabin Sun
Opplag
Softcover reprint of the original 1st ed. 2018
ISBN
9789811351815
Språk
Engelsk
Vekt
310 gram
Utgivelsesdato
4.1.2019
Antall sider
168