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Radiation Effects in Silicon Carbide
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The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Keywords: Silicon Carbide, Defects, Carrier Recombination, Annealing, Detectors, Electron Irradiation, Neutron Irradiation, Ion Irradiation.
- Forfatter
- A.A Lebedev
- ISBN
- 9781945291111
- Språk
- Engelsk
- Utgivelsesdato
- 1.1.2017
- Tilgjengelige elektroniske format
- PDF - Adobe DRM
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- E-bokleser i mobil/nettbrett
- Lesebrett
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