Spar
Nanoscale Redox Reaction at Metal/Oxide Interface
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
- Undertittel
- A Case Study on Schottky Contact and ReRAM
- Forfatter
- Takahiro Nagata
- Opplag
- 2020 ed.
- ISBN
- 9784431548492
- Språk
- Engelsk
- Vekt
- 310 gram
- Serie
- NIMS Monographs
- Utgivelsesdato
- 22.5.2020
- Forlag
- Springer Verlag, Japan
- Antall sider
- 89
