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GaP Heteroepitaxy on Si(100)
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
- Undertittel
- Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
- Forfatter
- Henning Döscher
- Opplag
- Softcover reprint of the original 1st ed. 2013
- ISBN
- 9783319379555
- Språk
- Engelsk
- Vekt
- 310 gram
- Serie
- Springer Theses
- Utgivelsesdato
- 3.9.2016
- Antall sider
- 143
