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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Engelsk
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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
ISBN
9789401150088
Språk
Engelsk
Utgivelsesdato
6.12.2012
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