
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility.
- Forfatter
- Mengqi Fu
- Opplag
- 2018 ed.
- ISBN
- 9789811334436
- Språk
- Engelsk
- Vekt
- 446 gram
- Serie
- Springer Theses
- Utgivelsesdato
- 12.12.2018
- Antall sider
- 102
