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Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy
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Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy

pocket, 2012
Engelsk
ISBN
9781286861233
Språk
Engelsk
Vekt
295 gram
Utgivelsesdato
26.10.2012
Antall sider
206