Secondary Ion Mass Spectrometry SIMS XI

This volume contains 252 contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, 7–12 September, 1997. The book covers a diverse range of research, reflecting the rapid growth in advanced semiconductor characterization, ultra shallow depth profiling, TOF-SIMS and the new areas in which SIMS techniques are being used, for example in biological sciences and organic surface characterization. Papers are presented under the following categories:*Isotopic SIMS*Biological SIMS*Semiconductor Characterization Techniques and Applications*Ultra Shallow Depth Profiling*Depth Profiling Fundamental/Modelling and Diffusion*Sputter-Induced Topography*Fundamentals of Molecular Desorption*Organic Materials*Practical TOF-SIMS*Polyatomic Primary Ions*Materials/Surface Analysis*Postionization*Instrumentation*Geological SIMS*Imaging*Fundamentals of Sputtering*Ion Formation and Cluster Formation*Quantitative Analysis Environmental/Particle Characterization*Related TechniquesThese proceedings provide an invaluable source of reference for both newcomers to the field and experienced SIMS users.