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Research on the Radiation Effects and Compact Model of SiGe HBT
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Research on the Radiation Effects and Compact Model of SiGe HBT

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
Kirjailija
Yabin Sun
Painos
Softcover reprint of the original 1st ed. 2018
ISBN
9789811351815
Kieli
englanti
Paino
310 grammaa
Julkaisupäivä
4.1.2019
Sivumäärä
168