Tallenna
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Kirjailija:
nidottu, 2016
englanti
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
- Kirjailija
- Jacopo Franco, Ben Kaczer, Guido Groeseneken
- Painos
- Softcover reprint of the original 1st ed. 2014
- ISBN
- 9789402402056
- Kieli
- englanti
- Paino
- 310 grammaa
- Julkaisupäivä
- 23.8.2016
- Kustantaja
- Springer
- Sivumäärä
- 187
