Siirry suoraan sisältöön
Novel Three-state Quantum Dot Gate Field Effect Transistor
Tallenna

Novel Three-state Quantum Dot Gate Field Effect Transistor

Kirjailija:
sidottu, 2013
englanti

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM).

Alaotsikko
Fabrication, Modeling and Applications
ISBN
9788132216346
Kieli
englanti
Paino
446 grammaa
Julkaisupäivä
10.12.2013
Sivumäärä
134