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Nonvolatile Memory Design

Kirjailija:
Sidottu, 2011
englanti
457,90 €

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Alaotsikko
Magnetic, Resistive, and Phase Change
Kirjailija
Li Hai, Chen Yiran
ISBN
9781439807453
Kieli
englanti
Paino
540 grammaa
Julkaisupäivä
19.12.2011
Sivumäärä
208