
Nanoscale Redox Reaction at Metal/Oxide Interface
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
- Alaotsikko
- A Case Study on Schottky Contact and ReRAM
- Kirjailija
- Takahiro Nagata
- Painos
- 2020 ed.
- ISBN
- 9784431548492
- Kieli
- englanti
- Paino
- 310 grammaa
- Sarja
- NIMS Monographs
- Julkaisupäivä
- 22.5.2020
- Kustantaja
- Springer Verlag, Japan
- Sivumäärä
- 89