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Nanoscale Redox Reaction at Metal/Oxide Interface
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Nanoscale Redox Reaction at Metal/Oxide Interface

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.

Alaotsikko
A Case Study on Schottky Contact and ReRAM
Kirjailija
Takahiro Nagata
Painos
2020 ed.
ISBN
9784431548492
Kieli
englanti
Paino
310 grammaa
Julkaisupäivä
22.5.2020
Sivumäärä
89