Tallenna
GaP Heteroepitaxy on Si(100)
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
- Alaotsikko
- Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
- Kirjailija
- Henning Döscher
- Painos
- Softcover reprint of the original 1st ed. 2013
- ISBN
- 9783319379555
- Kieli
- englanti
- Paino
- 310 grammaa
- Sarja
- Springer Theses
- Julkaisupäivä
- 3.9.2016
- Kustantaja
- Springer International Publishing AG
- Sivumäärä
- 143
