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Emerging Resistive Switching Memories
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Emerging Resistive Switching Memories

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Kirjailija
Jianyong Ouyang
Painos
1st ed. 2016
ISBN
9783319315706
Kieli
englanti
Paino
310 grammaa
Julkaisupäivä
11.7.2016
Sivumäärä
93