Siirry suoraan sisältöön
comprehensive study on properties of Semiconductors and p-n Junction
comprehensive study on properties of Semiconductors and p-n Junction
Tallenna

comprehensive study on properties of Semiconductors and p-n Junction

Lue Adobe DRM-yhteensopivassa e-kirjojen lukuohjelmassaTämä e-kirja on kopiosuojattu Adobe DRM:llä, mikä vaikuttaa siihen, millä alustalla voit lukea kirjaa. Lue lisää
Scientific Essay from the year 2012 in the subject Physics - Electrodynamics, , language: English, abstract: A comprehensive study of p-n junction is necessary to design an electronic device as well as circuits. An electronic device controls the movement of electrons. The study of electronic devices requires a basic understanding of the relationship between electrons and other components of an atom. This leads to knowledge of the differences between conductors, insulators and semiconductors and to an understanding of p-type and n-type semiconductor material. p-n junction is formed by joining p-type and n-type semiconductor materials. So the concept of semiconductor, majority and minority carrier of p-type and n-type semiconductor, doping, depletion region of p-n junction, mobility and conductivity, drift and diffusion current, carrier concentration calculation and Fermi energy level is actually the comprehensive study of p-n junction.
Kirjailija
Umana Rafiq
ISBN
9783656719052
Kieli
englanti
Julkaisupäivä
13.8.2014
Kustantaja
GRIN Verlag
Formaatti
  • PDF - Adobe DRM
Lue e-kirjoja täällä
  • Lue e-kirja mobiililaitteella/tabletilla
  • Lukulaite
  • Tietokone