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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Författare:
häftad, 2016
Engelska
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
- Författare
- Jacopo Franco, Ben Kaczer, Guido Groeseneken
- Upplaga
- Softcover reprint of the original 1st ed. 2014
- ISBN
- 9789402402056
- Språk
- Engelska
- Vikt
- 310 gram
- Utgivningsdatum
- 2016-08-23
- Förlag
- Springer
- Sidor
- 187
