Localization phenomenon in semiconductors; InGaAs, BGaAs and BInGaAs

In this work, we have studied the optical properties of InGaAs, BGaAs and BInGaAs by photoluminescence experiment study. We have obtained an abnormal behaviors in keys of luminescence (N or W-shape in PL- line width, S-shape in energy..) as function of a temperature. A localized state ensemeble LSE model was employed to reproduce very well these behaviors and to extract the depth of localisation energy.