Spara
Semiconductor Interfaces: Formation and Properties
(ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.
- Undertitel
- Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987
- Redaktör
- Guy LeLay, Jacques Derrien, Nino Boccara
- Upplaga
- Softcover Reprint of the Original 1st 1987 ed.
- ISBN
- 9783642729690
- Språk
- Engelska
- Vikt
- 310 gram
- Utgivningsdatum
- 2011-12-06
- Sidor
- 389
