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Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas
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Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

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The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission.
Upplaga
2011 ed.
ISBN
9781461428275
Språk
Engelska
Vikt
310 gram
Utgivningsdatum
2013-04-19
Sidor
78