NONRADIATIVE RECOMBINATION IN SEMICONDUC

In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.The following topics are dealt with phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity