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Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also …
This thesis reports on an outstanding research advance in the development of Application Specific Printed Electronic (ASPE) circuits. It proposes the novel Inkjet-Configurable Gate …
Tin (Sn) whiskers are electrically conductive, single crystal eruptions that grow from Sn film surfaces. Their high aspect ratio presents reliability problems for the electronics …
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the …
In this thesis, the author makes several contributions to the study of design of graphical materials. The thesis begins with a review of the relationship between design and …
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure …
This thesis introduces a successfully designed and commissioned intelligent health monitoring system, specifically for use on any industrial robot, which is able to predict the …
Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is …
This thesis provides a thorough noise analysis for conventional CIS readout chains, while also presenting and discussing a variety of noise reduction techniques that allow the read …
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure …