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Fracture-Instability Dynamics, Scaling and Ductile/Brittle Behavior: Volume 409
This book brings together scientists from diverse research communities to focus on four different aspects of fracture - instability dynamics, scaling/fractal geometry, the …
Gallium Nitride and Related Materials II: Volume 468
This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at …
Solid-State Ionics - 2002: Volume 756
This book combines the proceedings of Symposium EE, Solid-State Ionics, and Symposium FF, Materials for Fuel Cells and Fuel Processors, both from the 2002 MRS Fall Meeting in …
Defect and Impurity Engineered Semiconductors and Devices: Volume 378
Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the …
High-Temperature Ordered Intermetallic Alloys VII: Volume 460
Many advances in research and development have been made since the first MRS symposium on high-temperature ordered intermetallic alloys was held in 1984. That conference …
Nanophase and Nanocomposite Materials II: Volume 457
This book provides an international and interdisciplinary forum for the discussion of advances in the research of nanophase and nanocomposites. The term 'nanophase' refers to …
Environmental, Safety, and Health Issues in IC Production: Volume 447
It is clear that concern for the preservation of the environment is growing. The IC industry is reputed to be a clean one, and the introduction of electronic systems has played a …
Magnetic Ultrathin Films, Multilayers and Surfaces: Volume 384
The field of magnetic ultrathin films continues to be an exciting and rapidly expanding one, as demonstrated by recent advances in giant magnetoresistance (GMR), exchange-coupled …
Quantum Confined Semiconductor Nanostructures: Volume 737
Progress in nanoscale engineering, as well as an improved understanding of the physical phenomena at the nanometer scale, have contributed to the rapid development of novel …
CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here …