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This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book …
During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical …
This second edition of the book presents spintronic properties of III-V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book …
During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical …
During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical …